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Philips Semiconductors
Product specification
TrenchMOS transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using 'trench' technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.
BUK7528-55A BUK7628-55A
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 41 99 175 28 UNIT V A W C m
PINNING TO220AB & SOT404
PIN 1 2 3 DESCRIPTION gate drain
2
mb tab
PIN CONFIGURATION
SYMBOL
d
g
3 SOT404 BUK7628-55A
source
1
tab/mb drain
123 TO220AB BUK7528-55A
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 55 55 20 42 30 168 99 175 UNIT V V V A A A W C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient(TO220AB) Thermal resistance junction to ambient(SOT404) CONDITIONS in free air Minimum footprint, FR4 board TYP. 60 50 MAX. 1.5 UNIT K/W K/W K/W
June 2000
1
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor Standard level FET
STATIC CHARACTERISTICS
Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55C VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C VDS = 55 V; VGS = 0 V; VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 25 A Tj = 175C Tj = 175C MIN. 55 50 2 1 -
BUK7528-55A BUK7628-55A
TYP. 3 0.05 2 23.8 -
MAX. 4 4.4 10 500 100 28 56
UNIT V V V V V A A nA m m
DYNAMIC CHARACTERISTICS
Tmb = 25C unless otherwise specified SYMBOL Ciss Coss Crss td on tr td off tf Ld Ld Ld Ls PARAMETER Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. TYP. 874 218 137 14 68 83 43 4.5 3.5 2.5 7.5 MAX. 1165 261 188 21 102 116 60 UNIT pF pF pF ns ns ns ns nH nH nH nH
VDD = 30 V; Rload =1.2; VGS = 5 V; RG = 10
Measured from drain lead 6 mm from package to centre of die Measured from contact screw on tab to centre of die(TO220AB) Measured from upper edge of drain tab to centre of die(SOT404) Measured from source lead to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 41 A; VGS = 0 V IF = 20 A; -dIF/dt = 100 A/s; VGS = -10 V; VR = 30 V TYP. 0.85 1.1 45 88 MAX. 41 163 1.2 50 96 UNIT A A V V ns nC
June 2000
2
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 34 A; VDD 25 V; VGS = 5 V; RGS = 50 ; Tmb = 25 C MIN. -
BUK7528-55A BUK7628-55A
TYP. -
MAX. 58
UNIT mJ
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
1000
ID / A
RDS(on) = VDS/ ID 100
tp =
10us 100 us 10 D.C. 1 ms 10 ms 100 ms 1
0
20
40
60
80 100 Tmb / C
120
140
160
180
1
10 VDS / V
100
1000
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb)
Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
120 110 100 90 80 70 60 50 40 30 20 10 0
ID%
Normalised Current Derating
10
Zth / (K/W)
D= 1 0.5 0.2 0.1 0.1 0.05 0.02
T t PD tp D= tp T
0
0
20
40
60
80 100 Tmb / C
120
140
160
180
0.01 0.000001
0.0001
0.01 VDS / V
1
100
10000
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 5 V
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
June 2000
3
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor Standard level FET
BUK7528-55A BUK7628-55A
100
ID / A 18.0 90 16.0 12.0 80 11.5 70 60 50 40 30 20 10 0 0 2
10.5 10.0 11.0
100 9.5 9.0 8.5 8.0 VGS / V = 7.5 7.0 6.5 6.0 5.5 5.0 4.5 10 90 80 70 60 50 40 30 20 10 0
ID / A
Tj / C =
175
25 0 2 4 6 VGS/V 8 10 12
4
VDS / V
6
8
Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS
RDS(ON) / mOhm 6.0 VGS / V = 6.5 7.0 8.0
Fig.8. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
70 65 60 55 50 45 40 35 30 25 20
16 14 12 10 8 6
9.0 10.0
gfs / S
4 2 0
0
10
20
30
40 50 ID / A
60
70
80
90
0
10
20
30
40 ID / A
50
60
70
80
Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS
Fig.9. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V
Rds(on) normlised to 25degC
55 50 45 40 35 30 25 20 15 10
RDS(ON) / mOhm
2.5
2
1.5
1
6
8
10
12 14 VGS / V
16
18
20
0.5 -100
-50
0
50 Tmb / degC
100
150
200
Fig.7. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(VGS); conditions ID = 25 A;
Fig.10. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
June 2000
4
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor Standard level FET
BUK7528-55A BUK7628-55A
5
VGS(TO) / V max.
BUK759-60
12 10
VGS / V
4 typ. 3
VDS= 14V 8 VDS= 44V 6
min. 2
4 2 0
1
0 -100
-50
0
50 Tj / C
100
150
200
0
5
10
15 QG / nC
20
25
30
Fig.11. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Sub-Threshold Conduction
Fig.14. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 50 A; parameter VDS
1E-01
120 100 80
IF / A
1E-02 2% typ 98%
1E-03
Tj / C =
175 25
60
1E-04
40 20 0
1E-05
1E-06
0
1
2
3
4
5
0.0
0.5
VSDS / V
1.0
1.5
Fig.12. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.15. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
Thousands / pF 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 0.1 Crss Coss Ciss
110 100 90 80 70 60 50 40 30 20 10 0 20 40 60 80 100 120 Tmb / C 140 160 180
1 VDS/V
10
100
Fig.13. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Fig.16. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 75 A
June 2000
5
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor Standard level FET
BUK7528-55A BUK7628-55A
+
L VDS VGS 0 RGS T.U.T. R 01 shunt
VDD
+
RD VDS
VDD
-ID/100
VGS 0 RG T.U.T.
-
Fig.17. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS - VDD )
Fig.18. Switching test circuit.
June 2000
6
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor Standard level FET
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
BUK7528-55A BUK7628-55A
SOT78
E P
A A1 q
D1
D
L2(1)
L1 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 L2 max. 3.0
(1)
P 3.8 3.6
q 3.0 2.7
Q 2.6 2.2
Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8".
June 2000
7
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor Standard level FET
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped)
BUK7528-55A BUK7628-55A
SOT404
A E A1 mounting base
D1
D
HD
2
Lp
1
3
b c Q
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.40 14.80 Q 2.60 2.20
OUTLINE VERSION SOT404
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-12-14 99-06-25
Fig.20. SOT404 surface mounting package. Centre pin connected to mounting base. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8".
June 2000
8
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor Standard level FET
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
BUK7528-55A BUK7628-55A
9.0
17.5 2.0
3.8
5.08
Fig.21. SOT404 : soldering pattern for surface mounting.
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
June 2000
9
Rev 1.100

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